characteristic test conditions min. typ. max. unit semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. prelim. 4/94 bv dss i dss i gss v gs(th) i d(on) r ds(on) v dss i d i dm v gs p d t j , t stg t l 1 3 2 3.55 (0.140) 3.81 (0.150) 0.40 (0.016) 0.79 (0.031) 2.21 (0.087) 2.59 (0.102) 1.01 (0.040) 1.40 (0.055) 15.49 (0.610) 16.26 (0.640) 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) bsc 19.81 (0.780) 20.32 (0.800) 4.50 (0.177) max. 1.65 (0.065) 2.13 (0.084) 5.25 (0.215) bsc 2.87 (0.113) 3.12 (0.123) to247Cad package outline. dimensions in mm (inches) drain C source voltage continuous drain current pulsed drain current 1 gate C source voltage total power dissipation @ t case = 25c operating and storage junction temperature range lead temperature : 0.063 from case for 10 sec. v gs = 0v , i d = 250 m a v ds = v dss v ds = 0.8v dss , t c = 125c v gs = 30v , v ds = 0v v ds = v gs , i d = 1.0ma v ds > i d(on) x r ds(on) max v gs = 10v v gs = 10v , i d = 0.5 i d [cont.] nCchannel enhancement mode high voltage power mosfets 800 9.0 36 30 240 C55 to 150 300 v a a v w c drain C source breakdown voltage zero gate voltage drain current (v gs = 0v) gate C source leakage current gate threshold voltage on state drain current 2 drain C source on state resistance 2 800 250 1000 100 24 9 1.25 v m a na v a w absolute maximum ratings (t case = 25c unless otherwise stated) 1) repetitive rating: pulse width limited by maximum junction temperature. 2) pulse test: pulse width < 380 m s , duty cycle < 2% static electrical ratings (t case = 25c unless otherwise stated) BFC45 lab seme v dss 800v i d(cont) 9.0a r ds(on) 1.25 w w 4th generation mosfet terminal 1 gate terminal 2 drain terminal 3 source
BFC45 characteristic test conditions min. typ. max. unit c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f characteristic test conditions min. typ. max. unit 9.0 36 1.3 240 480 960 1.7 3.4 7 semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. prelim. 4/94 i s i sm v sd t rr q rr (body diode) (body diode) v gs = 0v , i s = C i d [cont.] i s = C i d [cont.] , dl s / dt = 100a/ m s continuous source current pulsed source current 1 diode forward voltage 2 reverse recovery time reverse recovery charge a v ns m c characteristic test conditions min. typ. max. unit 240 240 36 soa1 soa2 i lm safe operating area safe operating area inductive current clamped w w a characteristic min. typ. max. unit 0.51 40 r q jc r q ja junction to case junction to ambient c/w d ynamic chara cteristics source C drain diode ra tings and chara cteristics safe opera ting area chara cteristics thermal chara cteristics 1) repetitive rating: pulse width limited by maximum junction temperature. 2) pulse test: pulse width < 380 m s , duty cycle < 2% 3) see milCstdC750 method 3471 input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate C source charge gate C drain (miller) charge turnCon delay time rise time turn-off delay time fall time v gs = 0v v ds = 25v f = 1mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25c r g = 1.8 w pf nc ns 1500 1800 235 330 85 127 68 105 7.6 11 33 49 13 26 15 29 54 81 20 39 l ab sem e caution electrostatic sensitive devices. anti-static procedures must be followed. v ds = 0.4v dss , t = 1 sec. i ds = p d / 0.4v dss v ds = p d / i d [cont.] i ds = i d [cont.] , t = 1 sec.
|
